134. Leoy CC, Kan EWH, Arianto J, Choi WK, Wee ATS, Liu YJ
Oxidation study of RF sputtered amorphous and polycrstalline silicon germanium films
INT J MOD PHYS B 16 (28-29): 4224-4227 NOV 20 2002

133. Guo YP, Tan KC, Wang HQ, Huan CHA, Wee ATS
Low-energy electron diffraction study of oxygen-induced reconstructions on Cu(210)
PHYS REV B 66 (16): art. no. 165410 OCT 15 2002

132. Shi JR, Wang JP, Wee ATS, Yeo CB, Cheng CT, Ueda M, Tomioka S, Ohsako J
Photoelectron emission and Raman scattering studies of nitrogenated tetrahedral amorphous carbon films
J APPL PHYS 92 (10): 5966-5970 NOV 15 2002

131. YF Chong and KL Pey, ATS Wee, MO Thompson, CH Tung, A See
Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2 /silicon
APPL PHYS LETT 81 (20): 3786-3788 NOV 11 2002
 

130. Ng CM, Wee ATS, Huan CHA, Ho CS, Yakovlev N, See A
Evaluation of the silicon capping technique in SIMS
SURF INTERFACE ANAL 33 (9): 735-741 SEP 2002

129. Zheng JC, Wang HQ, Wee ATS, Huan CHA
Possible complete miscibility of (BN)(x)(C-2)(1-x) alloys
PHYS REV B 66 (9): art. no. 092104 SEP 1 2002

128. Chong YF, Pey KL, Wee ATS, Osipowicz T, See A, Chan L

Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized silicon

J APPL PHYS 92 (3): 1344-1350 AUG 1 2002

127. Xu H, Li YG, Wee ATS, Huan CHA, Tok ES
On STM imaging of GaAs(001)-(n x 6) surface reconstructions: Does the (6 x 6) structure exist?
SURF SCI 513 (2): 249-255 JUL 20 2002

126.Fan WJ, Yoon SF, Ng TK, Wang SZ, Loke WK, Liu R, Wee A

Comparison of nitrogen compositions in the as-grown GaNxAs1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

APPL PHYS LETT 80 (22): 4136-4138 JUN 3 2002

125. Chang W, Feng ZC, Lin J, Liu R, Wee ATS, Tone K, Zhao JH

Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiC

SURF INTERFACE ANAL 33 (6): 500-505 JUN 2002

124. Yeo KL, Wee ATS, Liu R, Ng CM, See A

SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substrates

SURF INTERFACE ANAL 33 (5): 373-375 MAY 2002

123. Ong WJ, Tok ES, Xu H, Wee ATS

Self-assembly of Si nanoclusters on 6H-SiC(0001)-(3x3) reconstructed surface

APPL PHYS LETT 80 (18): 3406-3408 MAY 6 2002

122. Huang HL, Goh SH, Wee ATS

Miscibility and interactions in poly (2,2,3,3,3-pentafluoropropyl methacrylate-co-4-vinylpyridine)lpoly(p-vinylphenol) blends

POLYMER 43 (9): 2861-2867 APR 2002

121. Feng ZC, Yang TR, Liu R, Wee TSA

Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
MAT SCI SEMICON PROC 5 (1): 39-43 FEB 2002

120. Zhang J, Woods NJ, Breton G, Price RW, Hartell AD, Lau GS, Liu R, Wee ATS, Tok ES

Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides

MAT SCI ENG B-SOLID 89 (1-3): 399-405 FEB 14 2002

119. Loh SW, Zhang DH, Li CY, Liu R, Wee ATS

Study of copper diffusion into tantalum and tantalum diffusion into copper

INT J MOD PHYS B 16 (1-2): 100-107 JAN 20 2002