2017

  1. Efficient carrier-to-exciton conversion in field emission tunnel diodes based on MIS-type van der Waals heterostack
    Shunfeng Wang, Junyong Wang, Weijie Zhao, Francesco Giustiniano, Leiqiang Chu, Ivan Verzhbitskiy, Justin Zhou Yong, Goki Eda
    Nano Letters, doi: 10.1021/acs.nanolett.7b02617

  2. Water‐Catalyzed Oxidation of Few‐Layer Black Phosphorous in Dark Environment
    Zehua Hu, Qiang Li, Bo Lei, Qionghua Zhou, Du Xiang, Zhiyang Lyu, Fang Hu, Junyong Wang, Yinjuan Ren, Rui Guo, Eda Goki, Li Wang, Cheng Han, Jinlan Wang, Wei Chen
    Angewandte Chemie International Edition, doi: 10.1002/anie.201705012

  3. Thermal dissociation of inter-layer excitons in MoS2/MoSe2 hetero-bilayers
    Shinichiro Mouri, Wenjing Zhang, Daichi Kozawa, Yuhei Miyauchi, Goki Eda, Kazunari Matsuda
    Nanoscale 9 (20), 6674-6679, doi: 10.1039/C7NR01598D

  4. Two-step fabrication of single-layer rectangular SnSe flakes
    Jizhou Jiang, Calvin Pei Yu Wong, Jing Zou, Shisheng Li, Qixing Wang, Jianyi Chen, Dianyu Qi, Hongyu Wang, Goki Eda, Daniel HC Chua, Yumeng Shi, Wenjing Zhang, Andrew Thye Shen Wee
    2D Materials, doi: 10.1088/2053-1583/aa6aec

  5. Determination of Crystal Axes in Semimetallic T′‐MoTe2 by Polarized Raman Spectroscopy
    J Wang, X Luo, S Li, I Verzhbitskiy, W Zhao, S Wang, SY Quek, G Eda
    Advanced Functional Materials, doi: 10.1002/adfm.201604799

  6. Chemical Stabilization of 1T′ Phase Transition Metal Dichalcogenides with Giant Optical Kerr Nonlinearity
    SJ Tan, Ibrahim Abdelwahab, Zijing Ding, Xiaoxu Zhao, Tieshan Yang, GZ Loke, Han Lin, Ivan Verzhbitskiy, Sock Mui Poh, Hai Xu, Chang Tai Nai, Wu Zhou, Goki Eda, Baohua Jia, Kian Ping Loh
    Journal of the American Chemical Society 139 (6), 2504, doi: 10.1021/jacs.6b13238

  7. Nonlinear optical properties of a one-dimensional coordination polymer
    Min Liu, Hong Sheng Quah, Shuangchun Wen, Junyong Wang, P Sanjay Kumar, Goki Eda, Jagadese J Vittal, Wei Ji
    Journal of Materials Chemistry C, doi: 10.1039/C6TC05372F

  8. Topological Weyl phase transition in MoxW1-x Te2
    Ilya Belopolski, Daniel S Sanchez, Yukiaki Ishida, Peng Yu, Songtian S Zhang, Tay-Rong Chang, Guoqing Chang, Xingchen Pan, Hong Lu, Hao Zheng, Su-Yang Xu, Baigeng Wang, Guang Bian, Da-Wei Fu, Shisheng Li, Goki Eda, Horng-Tay Jeng, Takeshi Kondo, Shuang Jia, Hsin Lin, Zheng Liu, Fengqi Song, Shik Shin, M Zahid Hasan
    arXiv preprint arXiv:1612.07793

2016

  1. Characterization of the second-and third-order nonlinear optical susceptibilities of monolayer MoS2 using multiphoton microscopy
    RI Woodward, RT Murray, CF Phelan, REP de Oliveira, TH Runcorn, EJR Kelleher, S Li, EC de Oliveira, GJM Fechine, G Eda, CJS de Matos
    2D Materials 4 (1), 011006, doi: 10.1088/2053-1583/4/1/011006

  2. Enhancing charge-density-wave order in 1T-TiSe2 nanosheet by encapsulation with hexagonal boron nitride
    LJ Li, WJ Zhao, B Liu, TH Ren, G Eda, KP Loh
    Applied Physics Letters 109 (14), 141902, doi: 10.1063/1.4963885

  3. Valence‐band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
    Hisato Yamaguchi, Shuichi Ogawa, Daiki Watanabe, Hideaki Hozumi, Yongqian Gao, Goki Eda, Cecilia Mattevi, Takeshi Fujita, Akitaka Yoshigoe, Shinji Ishizuka, Lyudmyla Adamska, Takatoshi Yamada, Andrew M Dattelbaum, Gautam Gupta, Stephen K Doorn, Kirill A Velizhanin, Yuden Teraoka, Mingwei Chen, Han Htoon, Manish Chhowalla, Aditya D Mohite, Yuji Takakuwa
    physica status solidi (a) 213 (9), 2380-2386, doi: 10.1002/pssa.201532855

  4. Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many‐Body Effects
    Bo Liu, Weijie Zhao, Zijing Ding, Ivan Verzhbitskiy, Linjun Li, Junpeng Lu, Jianyi Chen, Goki Eda, Kian Ping Loh
    Advanced Materials 28 (30), 6457-6464, doi: 10.1002/adma.201504876

  5. Feature issue introduction: two-dimensional materials for photonics and optoelectronics
    Goki Eda, Wei Ji, Fengnian Xia, Hui Zhao
    Optical Materials Express 6 (7), 2458-2459, doi: 10.1364/OME.6.002458

  6. Evidence for fast interlayer energy transfer in MoSe2/WS2 heterostructures
    Daichi Kozawa, Alexandra Carvalho, Ivan Verzhbitskiy, Francesco Giustiniano, Yuhei Miyauchi, Shinichiro Mouri, AH Castro Neto, Kazunari Matsuda, Goki Eda
    Nano letters 16 (7), 4087-4093, doi: 10.1021/acs.nanolett.6b00801

  7. Characterization of the nonlinear susceptibility of monolayer MoS2 using second-and third-harmonic generation microscopy
    Robert I. Woodward, Robert T. Murray, Ciaran F. Phelan, Rafael E. de Oliveira, Shisheng Li, Goki Eda, and Christiano J. de Matos
    CLEO: Science and Innovations, STu1R. 3, doi: 10.1364/CLEO_SI.2016.STu1R.3

  8. Dynamic structural evolution of metal–metal bonding network in monolayer WS2
    Kiran Kumar Amara, Yifeng Chen, Yung-Chang Lin, Rajeev Kumar, Eiji Okunishi, Kazu Suenaga, Su Ying Quek, Goki Eda
    Chemistry of Materials 28 (7), 2308-2314, doi: 10.1021/acs.chemmater.6b00379

  9. Stable Monolayer Transition Metal Dichalcogenide Ordered Alloys with Tunable Electronic Properties
    Teck L Tan, Man-Fai Ng, Goki Eda
    The Journal of Physical Chemistry C 120 (5), 2501-2508, doi: 10.1021/acs.jpcc.5b10739

  10. Exciton–Plasmon Coupling and Electromagnetically Induced Transparency in Monolayer Semiconductors Hybridized with Ag Nanoparticles
    Weijie Zhao, Shunfeng Wang, Bo Liu, Ivan Verzhbitskiy, Shisheng Li, Francesco Giustiniano, Daichi Kozawa, Kian Ping Loh, Kazunari Matsuda, Koichi Okamoto, Rupert F Oulton, Goki Eda
    Advanced Materials, doi: 10.1002/adma.201504478

  11. Quantum Transport and Observation of Dyakonov-Perel Spin-Orbit Scattering in Monolayer MoS2
    H Schmidt, I Yudhistira, L Chu, AH Castro Neto, B Özyilmaz, S Adam, G Eda
    Physical review letters 116 (4), 046803, doi: 10.1103/PhysRevLett.116.046803

  12. Heterointerface screening effects between organic monolayers and monolayer transition metal dichalcogenides
    Yu Jie Zheng, Yu Li Huang, Yifeng Chen, Weijie Zhao, Goki Eda, Catalin D Spataru, Wenjing Zhang, Yung-Huang Chang, Lain-Jong Li, Dongzhi Chi, Su Ying Quek, Andrew Thye Shen Wee
    ACS nano 10 (2), 2476-2484, doi: 10.1021/acsnano.5b07314

  13. Discovery of a new type of topological Weyl fermion semimetal state in MoxW1−xTe2
    Ilya Belopolski, Daniel S Sanchez, Yukiaki Ishida, Xingchen Pan, Peng Yu, Su-Yang Xu, Guoqing Chang, Tay-Rong Chang, Hao Zheng, Nasser Alidoust, Guang Bian, Madhab Neupane, Shin-Ming Huang, Chi-Cheng Lee, You Song, Haijun Bu, Guanghou Wang, Shisheng Li, Goki Eda, Horng-Tay Jeng, Takeshi Kondo, Hsin Lin, Zheng Liu, Fengqi Song, Shik Shin, M Zahid Hasan
    Nat Commun. 2016; 7: 13643., doi: 10.1038%2Fncomms13643

  14. Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures
    Zhuo Wang, Zhaogang Dong, Yinghong Gu, Yung-Huang Chang, Lei Zhang, Lain-Jong Li, Weijie Zhao, Goki Eda, Wenjing Zhang, Gustavo Grinblat, Stefan A Maier, Joel KW Yang, Cheng-Wei Qiu, Andrew TS Wee
    Nat Commun. 2016; 7: 11283., doi: 10.1038/ncomms11283

  15. Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors
    Shunfeng Wang, Weijie Zhao, Francesco Giustiniano, Goki Eda
    Physical Chemistry Chemical Physics 18 (6), 4304-4309, doi: 10.1039/C5CP07194A

  16. Controlling many-body states by the electric-field effect in a two-dimensional material
    LJ Li, ECT O’Farrell, KP Loh, Goki Eda, B Özyilmaz, AH Castro Neto
    Nature 529, 185–189, doi: 10.1038/nature16175 (Featured in NUS Press Release)

2015

  1. Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals
    Shisheng Li, Shunfeng Wang, Dai-Ming Tang, Weijie Zhao, Huilong Xu, Leiqiang Chu, Yoshio Bando, Dmitri Golberg, Goki Eda
    Applied Materials Today 1 (1), 60-66, doi: 10.1016/j.apmt.2015.09.001 (Featured in Materials Today)

  2. Strong optical absorption and photocarrier relaxation in 2-D semiconductors
    Rajeev Kumar, Ivan Verzhbitskiy, Goki Eda
    IEEE Journal of Quantum Electronics 51 (10), 1-6, doi: 10.1109/JQE.2015.2470549

  3. Photoluminescence Properties in Monolayer MoSe2-MoS2 Hetero-Structures
    Shinichiro Mouri, Daichi Kozawa, Goki Eda, Yuhei Miyauchi, Kazunari Matsuda
    JSAP-OSA Joint Symposia, 15p_2D_8

  4. Efficient interlayer energy transfer via 2D dipole coupling in MoSe2/WS2 heterostructures

    arXiv preprint Arxiv:1509.01875

  5. Quantum Transport Detected by Strong Proximity Interaction at a Graphene–WS2 van der Waals Interface
    ECT O’Farrell, A Avsar, JY Tan, G Eda, B Özyilmaz
    Nano letters 15 (9), 5682-5688, doi: 10.1021/acs.nanolett.5b01128

  6. Colossal ultraviolet photoresponsivity of few-layer black phosphorus
    Jing Wu, Gavin Kok Wai Koon, Du Xiang, Cheng Han, Chee Tat Toh, Eeshan S Kulkarni, Ivan Verzhbitskiy, Alexandra Carvalho, Aleksandr S Rodin, Steven P Koenig, Goki Eda, Wei Chen, AH Castro Neto, Barbaros Özyilmaz
    ACS nano 9 (8), 8070-8077, doi: 10.1021/acsnano.5b01922

  7. Observing grain boundaries in monolayer molybdenum disulphide by multiphoton microscopy
    Lasse Karvonen, Antti Säynätjoki, Babak Amirsolaimani, Shisheng Li, Soroush Mehravar, Nasser Peyghambarian, Harri Lipsanen, Goki Eda, Khanh Kieu, Zhipei Sun
    Nonlinear Optics, NW3B. 1, doi: 10.1364/NLO.2015.NW3B.1

  8. Luminescent Properties of a Water-Soluble Conjugated Polymer Incorporating Graphene-Oxide Quantum Dots
    Penglei Li, Francesco Di Stasio, Goki Eda, Oliver Fenwick, Shane O McDonnell, Harry L Anderson, Manish Chhowalla, Franco Cacialli
    ChemPhysChem 16 (6), 1258-1262, doi: 10.1002/cphc.201402744

  9. Theoretical study of quantum transport in two dimensional MoS2
    Indra Yudhistira, Hennrik Schmidt, Leiqiang Chu, Goki Eda, Shaffique Adam
    Bulletin of the American Physical Society 60

  10. Complex electrical permittivity of the monolayer molybdenum disulfide (MoS2) in near UV and visible
    Bablu Mukherjee, Frank Tseng, Daniel Gunlycke, Kiran Kumar Amara, Goki Eda, Ergun Simsek
    Optical Materials Express 5 (2), 447-455, doi: 10.1364/OME.5.000447

  11. Applied Materials Today
    Shisheng Li, Shunfeng Wang, Dai-Ming Tang, Weijie Zhao, Huilong Xu, Leiqiang Chu, Yoshio Bando, Dmitri Golberg, Goki Eda

  12. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
    H. Yamaguchi, S. Ogawa, D. Watanabe, H. Hozumi, Y. Gao, G. Eda, C. Mattevi, T. Fujita, A. Yoshigoe, S. Ishizuka, L. Adamska, T. Yamada, A. M. Dattelbaum, G. Gupta, S. K. Doorn, K. A. Velizhanin, Y. Teraoka, M. Chen, H. Htoon, M. Chhowalla, A. D. Mohite, Y. Takakuwa
    Phys. Status Solidi A, 213: 2380–2386, doi: 10.1002/pssa.201532855

  13. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects
    H. Schmidt, F. Giustiniano, and G. Eda
    Chem. Soc. Rev. Advance Article (2015), doi: 10.1039/C5CS00275C

  14. van der Waals Force: A Dominant Factor for Reactivity of Graphene
    J.H.Lee, A. Avsar, J. Jung, J.Y. Tan, K. Watanabe, T. Taniguchi, S. Natarajan, G. Eda, S. Adam, A.H.C. Neto and B. Ozyilmaz
    Nano Lett. 15, 319 (2015), doi: 10.1021/nl5036012

  15. Spin–orbit proximity effect in graphene
    A. Avsar, J.Y. Tan, T. Taychatanapat, J. Balakrishnan, G. K. W. Koon, Y. Yeo, J. Lahiri, A. Carvalho, A. S. Rodin, E. C. T. O’Farrell, G. Eda, A. H. Castro Neto, B. Özyilmaz
    Nat Commun, 5 (2015), doi: 10.1038/ncomms5875

  16. Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets
    W. Zhao, R.M. Ribeiro, and G. Eda
    Acc. Chem. Res. 48, 91 (2015), doi: 10.1021/ar500303m

2014

  1. Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
    L. Chu, H. Schmidt, J. Pu, S. Wang, B. Özyilmaz, T. Takenobu, and G. Eda
    Sci. Rep. 4, 7293 (2014), doi: 10.1038/srep07293

  2. Wet chemical thinning of molybdenum disulfide down to its monolayer
    K.K. Amara, L. Chu, R. Kumar, M.Toh and G. Eda
    APL Mat. 2, 092509 (2014), doi: 10.1063/1.4893962

  3. Nonlinear photoluminescence in atomically thin layered WSe2 arising from diffusion-assisted exciton-exciton annihilation
    S. Mouri, Y. Miyauchi, M. Toh, W. Zhao, G. Eda, K. Matsuda
    Physical Review B, 90 (15), 155449 (2014), doi: 10.1103/PhysRevB.90.155449

  4. Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides
    D. Kozawa, R. S. Kumar, A. Carvalho,A. K. Kumar, W. Zhao, S. Wang, M. Toh, R. M. Ribeiro, A. H. Castro Neto, K. Matsuda, G. Eda
    Nat. Comm. 5, 4543 (2014), doi: 10.1038/ncomms5543

  5. Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
    A. V. Kretinin, Y. Cao, J. S. Tu, G. L. Yu, R. Jalil, K. S. Novoselov, S. J. Haigh, A. Gholinia, A. Mishchenko, M. Lozada, T. Georgiou, C. R. Woods, F. Withers, P. Blake, G. Eda, A. Wirsig, C. Hucho, K. Watanabe, T. Taniguchi, A. K. Geim, and R. V. Gorbachev
    Nano Lett. 14, 3270 (2014), doi: 10.1021/nl5006542

  6. Large Thermoelectricity via Variable Range Hopping in CVD Grown Single-layer MoS2
    J. Wu, H. Schmidt, K.K. Amara, X. Xu, G. Eda, B. Özyilmaz
    Nano Lett. 14, 2730 (2014), doi: 10.1021/nl500666m

  7. Electronic transport in graphene-based heterostructures
    J. Y. Tan, A. Avsar, J. Balakrishnan, G. K. W. Koon, T. Taychatanapat, E. C. T. O'Farrell, K. Watanabe, T. Taniguchi, G. Eda, A. H. Castro Neto and B. Özyilmaz
    Appl. Phys. Lett. 104, 183504 (2014), doi: 10.1063/1.4872178

  8. Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition
    H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, B. Özyilmaz, and G. Eda
    Nano Lett. 14, 1909 (2014), doi: 10.1021/nl4046922

  9. Macroporous polymer nanocomposites synthesised from high internal phase emulsion templates stabilised by reduced graphene oxide
    L.L.C. Wong, S. Barg, A. Menner, P.D. Pereira, G. Eda, M. Chowalla, E. Saiz, A. Bismarck
    Polymer 55 395 (2014), doi: 10.1016/j.polymer.2013.09.039

  10. Charge transport and exciton dynamics in 2D semiconductors
    G. Eda
    Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014, art. no. 6902957, pp. 3-4. (2014)

  11. Band nesting and photocarrier relaxation in group 6 transition metal dichalcogenide
    G. Eda
    JSAP-OSA Joint Symposia, JSAP (2014)

2013

  1. Conducting MoS2 Nanosheets as Catalysts for Hydrogen Evolution Reaction
    D. Voiry, M. Salehi, R. Silva, T. Fujita, M.W. Chen, T. Asefa, V.B. Shenoy, G. Eda and M. Chhowalla
    Nano Lett. 13, 6222 (2013), doi: 10.1021/nl403661s

  2. Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2
    W. Zhao, R.M. Ribeiro, M.L. Toh, A. Carvalho, C. Kloc , A.H. Castro Neto, and G. Eda
    Nano Lett. 13, 5627 (2013), doi: 10.1021/nl403270k

  3. Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
    W. Zhao, Z. Ghorannevis, K.K. Amara, J.R. Pang, M.L. Toh, X. Zhang, C. Kloc, P.-H. Tan, and G. Eda
    Nanoscale 5, 9677 (2013), doi: 10.1039/C3NR03052K

  4. Enhanced catalytic activity in strained chemically exfoliated WS2 nanosheets for hydrogen evolution
    D. Voiry, H. Yamaguchi, J. Li, R. Silva, D.C.B. Alves, T. Fujita, M.W. Chen, T. Asefa, V.B. Shenoy, G. Eda, and M. Chhowalla
    Nat. Mater 12, 850 (2013), doi: 10.1038/nmat3700

  5. Photoelectrochemical properties of chemically exfoliated MoS2
    L. King, W. Zhao, M. Chhowalla, J. Riley, and G. Eda
    J. Mater. Chem. A, 1, 8935 (2013), doi: 10.1039/C3TA11633F

  6. Two-Dimensional Crystals: Managing Light for Optoelectronics
    G. Eda and S. Maier
    ACS Nano 7, 5660 (2013), doi: 10.1021/nn403159y

  7. Graphene oxide gate dielectric for graphene-based monolithic field effect transistors
    G. Eda, A. Nathan, P. Wöbkenberg, F. Colleaux, K. Ghaffarzadeh, T.D. Anthopoulos, and M. Chhowalla
    Appl. Phys. Lett. 102, 133108 (2013), doi: 10.1063/1.4799970

  8. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
    M. Chhowalla, H.S. Shin, G. Eda, L.-J. Li, K. P. Loh and H. Zhang
    Nature Chem. 5, 263 (2013), doi: 10.1038/nchem.1589

  9. Post-fabrication, in situ laser reduction of graphene oxide devices
    C. Petridis, Y.-H. Lin, K. Savva, G. Eda, E. Kymakis, T. D. Anthopoulos, and E. Stratakis
    Appl. Phys. Lett. 102, 093115 (2013), doi: 10.1063/1.4794901

  10. An innovative way of etching MoS2: Characterization and mechanistic investigation
    Y. Huang, J. Wu, X. Xu, Y. Ho, G. Ni, Q. Zou, G. K. W. Koon, W. Zhao, A. H. Castro Neto, G. Eda, C. Shen, B. Özyilmaz
    Nano Res. 6, 200 (2013), doi: 10.1007/s12274-013-0296-8

  11. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2
    W. Zhao, Z. Ghorannevis, L. Chu, M.L. Toh, C. Kloc, P.-H. Tan, and G. Eda
    ACS nano 7, 791 (2013), doi: 10.1021/nn305275h

  12. Observation of wrinkle induced potential drops in biased chemically derived graphene thin film networks
    S. Ladak, J.M. Ball, D. Moseley, G. Eda, W.R. Branford, M. Chhowalla, T.D. Anthopoulos, L. F. Cohen
    Carbon, 64, 35-44. (2013), doi: 10.1016/j.carbon.2013.06.051

2012

  1. Coherent atomic and electronic heterostructures of single layer MoS2
    G. Eda, T. Fujita, H. Yamaguchi, D. Voiry, M. Chen and M. Chhowalla
    ACS nano 6, 7311 (2012), doi: 10.1021/nn302422x

  2. Tunable photoluminescence from graphene oxide
    C.-T. Chien, S.-S. Li, W.-J. Lai, Y.-C. Yeh, H.-A. Chen, I-S. Chen, L.-C. Chen, K.-H. Chen, T. Nemoto, S. Isoda, M. Chen, T. Fujita, G. Eda, H. Yamaguchi, M. Chhowalla and C.-W. Chen
    Angew. Chem. Int. Ed. 51, 6662 (2012), doi: 10.1002/anie.201200474

  3. Free-standing graphene on microstructured silicon vertices for enhanced field emission properties
    E. Stratakis, G. Eda, H. Yamaguchi, E. Kymakis, C. Fotakis and M. Chhowalla
    Nanoscale 4, 3069 (2012), doi: 10.1039/C2NR30622K

2011

  1. Photoluminescence from chemically exfoliated MoS2
    G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen and M. Chhowalla
    Nano Lett. 11, 5111 (2011), doi: 10.1021/nl201874w

  2. Field emission from atomically thin edges of reduced graphene oxide
    K. Murakami, H. Yamaguchi, G. Eda, T. Fujita, P. Guan, W. Wang, C. Gong, J. Boisse, S. Miller, M. Acik, K. Cho, Y.J. Chabal, M. Chen, F. Wakaya, M. Takai, M. Chhowalla
    Proceedings of the International Display Workshops, 3, pp. 1775-1778

  3. Partially oxidized graphene as a precursor to graphene
    G. Eda, J. Ball, C. Mattevi, M. Acik, L. Artiglia, G. Granozzi, Y. Chabal, T.D. Anthopoulos, M. Chhowalla
    Journal of Materials Chemistry 2011, 21 (30), 11217-11223 (2011), doi: 10.1039/C1JM11266J

  4. Graphene patchwork
    G. Eda and M. Chhowalla
    ACS nano 5, 4265 (2011), doi: 10.1021/nn202025u

  5. Field emission from atomically thin edges of reduced graphene oxide
    H. Yamaguchi, K. Murakami, G. Eda, T. Fujita, P. Guan, W. Wang, C. Gong, J. Boisse, S. Miller, M. Acik, K. Cho, Y. J. Chabal, M. Chen, F. Wakaya, M. Takai and M. Chhowalla
    ACS Nano 5, 4945 (2011), doi: 10.1021/nn201043a

  6. Partially oxidized graphene as a precursor to graphene
    G. Eda, J. Ball, C. Mattevi, Muge Acik, Luca Artiglia, Gaetano Granozzi, Yves Chabal, T. D. Anthopoulos and M. Chhowalla
    J. Mater. Chem. 21, 11217 (2011), doi: 10.1039/C1JM11266J

  7. Incorporation of reduced graphene oxide in quantum dot sensitized solar cell based on ZnO nanorod
    J. Chen, C. Li, G. Eda, Y. Zhang, W. Deng, W. Lei, D. Chu, B. Wang, M. Chhowalla, and W. I. Milne
    Chem. Comm. 47, 6084 (2011), doi: 10.1039/C1CC10162E

  8. Reduced graphene oxide electrodes for large area organic electronics
    P. H. Wöbkenberg, G. Eda, D.-S. Leem, J. C. de Mello, D. D. C. Bradley,M. Chhowalla and T. D. Anthopoulos
    Adv. Mater. 23, 1558 (2011), doi: 10.1002/adma.201004161

- 2010

  1. Direct white light emission from inorganic-organic hybrid semiconductor bulk materials
    W. Ki, J. Li, G. Eda and M. Chhowalla
    J. Mater Chem. 20, 10676 (2010), doi: 10.1039/C0JM02213F

  2. Graphene Oxide as a Chemically Tunable Platform for Optical Applications
    K. P. Loh, Q. Bao, G. Eda, and M. Chhowalla
    Nat. Chem. 2, 1015 (2010), doi: 10.1038/nchem.907

  3. Chemically derived graphene oxide: Towards large-area thin film electronics and opto-electronics
    G. Eda and M. Chhowalla
    Adv. Mater. 22, 2392 (2010), doi: 10.1002/adma.200903689

  4. Graphene and mobile ions: The key to all-plastic, solution-processed light-emitting devices
    P. Matyba, H. Yamaguchi, G. Eda, M. Chhowalla, L. Edman and N. D. Robinson
    ACS Nano 4, 637-642 (2010), doi: 10.1021/nn9018569 (Featured in The Economist)

  5. Highly uniform 300 mm wafer-scale deposition of single and multi-layered chemically derived graphene thin films
    H. Yamaguchi, G. Eda, C. Mattevi, H. Kim, and M. Chhowalla
    ACS Nano 4, 524-528 (2010), doi: 10.1021/nn901496p

  6. Blue photoluminescence from chemically derived graphene oxide
    G. Eda, Y.-Y. Lin, C. Mattevi, H. Yamaguchi, H.-A. Chen, I.-S. Chen, C.-W. Chen, and M. Chhowalla
    Adv. Mater. 22, 505-509 (2009), doi: 10.1002/adma.200901996

  7. Large area deposition of graphene thin films by langmuir-blodgett assembly and their optoelectronic properties
    Kim, H., Mattevi, C., Eda, G., Yamaguchi, H., Kim, H.J., Riman, R.E., Chhowall, M
    2009 International Semiconductor Device Research Symposium, ISDRS '09, art. no. 5378077 (2009)
  8. Evolution of electrical, chemical, and structural properties of transparent and conducting chemically derived graphene thin films
    C. Mattevi, G. Eda, S. Agnoli, S. Miller, K.A. Mkhoyan, O. Celik, D. Mastrogiovanni, G. Granozzi, E. Garfunkel and M. Chhowalla
    Adv. Funct. Mater. 19, 1-7 (2009), doi: 10.1002/adfm.200900166

  9. Insulator to semi-metal transition in graphene oxide
    G. Eda, C. Mattevi, H. Yamaguchi, H. Kim and M. Chhowalla
    J. Phys. Chem. C 113, 15768 (2009), doi: 10.1021/jp9051402

  10. Zinc oxide nanowire networks for macroelectronic devices
    H.E. Unalan, Y. Zhang, P. Hiralal, S. Dalal, D. Chu, G. Eda, K.B.K. Teo, M. Chhowalla W.I. Milne and G.A.J. Amaratunga
    Appl. Phys. Lett. 94, 163501 (2009), doi: 10.1109/NANO.2008.166
    (See also Research Highlight in Nature Nanotechnology)
  11. Atomic and electronic structure of graphene oxide
    K.A. Mkhoyan, A.W. Contryman, J. Silcox, D.A. Stewart, G. Eda, C. Mattevi, S. Miller and M. Chhowalla
    Nano Lett. 9, 1058-1063 (2009), doi: 10.1021/nl8034256

  12. Graphene-based composite thin films for electronics
    G. Eda and M. Chhowalla
    Nano Lett. 9, 814 (2009), doi: 10.1021/nl8035367

  13. Field emission from graphene based composite thin films
    G. Eda, H.E. Unalan, N.L. Rupesinghe, G.A.J. Amaratunga and M. Chhowalla
    Appl. Phys. Lett. 93, 233502 (2008), doi: 10.1063/1.3028339

  14. Transparent and conducting electrodes for organic electronics from reduced graphene oxide
    G. Eda, Y.-Y. Lin, S. Miller, C.-W. Chen, W.-F. Su and M. Chhowalla
    Appl. Phys. Lett. 92, 233305 (2008), doi: 10.1063/1.2937846

  15. Bundling dynamics of single walled carbon nanotubes in aqueous suspensions
    G. Eda, G. Fanchini, A. Kanwal and M. Chhowalla
    J. Appl. Phys. 103, 093118 (2008), doi: 10.1063/1.2919164

  16. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material
    G. Eda, G. Fanchini and M. Chhowalla
    Nature Nanotech. 3, 270-274 (2008), doi: 10.1038/nnano.2008.83
    (See also News and Views by Prof. John A. Rogers [J. Rogers Nature Nanotech. 3, 254 (2008)]
  17. Bead-to-fiber transition in electrospun polystyrene
    G. Eda and S. Shivkumar
    J. Appl. Polym. Sci. 106, 475-487 (2007), doi: 10.1002/app.25907

  18. Solvent effects on jet evolution during electrospinning of semi-dilute polystyrene solution
    G. Eda, L. Liu and S. Shivkumar
    Eur. Polym. J. 43, 1154-1167 (2007), doi: 10.1016/j.eurpolymj.2007.01.003

  19. Improved conductivity of transparent single-wall carbon nanotube thin films via stable postdeposition functionalization
    B.B. Parekh, G. Fanchini, G. Eda and M. Chhowalla
    Appl. Phys. Lett. 90, 121913 (2007), doi: 10.1063/1.2715027

  20. Flight path of electrospun polystyrene solutions: Effects of molecular weight and concentration
    G. Eda, J. Liu and S. Shivkumar
    Mater. Lett. 61, 1451-1455 (2007), doi: 10.1016/j.matlet.2006.07.052


  21. Bead structure variations during electrospinning of polystyrene
    G. Eda and S. Shivkumar
    J. Mater. Sci. 41, 5704-5078 (2006), doi: 10.1007/s10853-006-0069-9


  22. Bead and fiber morphologies during electrospinning of polystyrene
    G. Eda and S. Shivkumar
    Annual Technical Conference - ANTEC, Conference Proceedings, 3, pp. 1381-1385. (2006)
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