SSL Seminar Series 2002 No.2

Title:Selective Area Growth of Carbon Nanotubes by Ion Beam Modification
Speaker: Mr Gohel Amarsinh and Mr Chin Kok Chung (SSL, Dept. of Physics, NUS)
Date: Feburary 5, 2002
Time: 5:00-6:00pm
Venue: Physics Resource Room (Blk S13 # 02-16)

In this research project, we aim to utilise the O2+ primary ion beam of the secondary ion mass spectroscopic (SIMS) system to modify the catalyst surface to exhibit selective growth of carbon nanotubes. The catalyst used is an Fe film of 50 nm thick deposited on Si(100) substrate. Craters of various depths are made with the ion beam and the modified morphology is studied in terms of grain size and roughness. Carbon nanotubes is then synthesized on the modified Fe/Si substrate using hot filament plasma enhanced chemical vapor deposition. It is observed that there is indeed selective growth of carbon nanotubes on the catalyst, with a higher growth rate and denser growth being observed on the modified surfaces, which includes the crater base and its borders, where grain size is within the range of 27nm to 40nm and roughness values of 2.20nm to 4.00nm.