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SSL Seminar Series 2001 No.17
Time: October 18, 2001, 5:00-6:00pm
Venue: Physics Resource Room, S13, 02-16
Speaker: Mr Chang Wenyi (SSL, Physics Dept., NUS)
Title: Combination investigation of optical and structural
properties on ion implanted 4H-SiC
Abstract:
Part 1: High energy (2.1 MeV) vanadium ions (V+) was implanted into
p- and n-type 4H-Silicon Carbide (SiC) at room temperature, followed
by high temperature annealing at 1450 and 1650 oC. Dopant redistribution
after annealing was revealed by SIMS. Different V diffusion phenomena
were observed in the shallow and deep half-profile region. Dislocations
accumulated in deep region enhanced V diffusion significantly in contrast
to small out-diffusion effect in shallow region during 1450 and 1650oC
annealing. V diffusion coefficient at 1650 oC is derived (4.5x10-14
cm-2/s) using Pearson IV model. Part 2: Multiple energies Al+ and
C+ co-implantations were performed into 4H-SiC epitaxial layers at
RT. Both the amorphization/lattice disorder induced by RT implantation,
and a partial recrystallization and a concomitant thinning of the
amorphous layer after high temperature annealing were evidenced by
IR reflectance and Raman scattering. SIMS provides useful information
on the redistribution of dopants after high temperature annealing.
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