WANG Shijie

PhD, National University of Singapore (2002)

Adjunct Associate Professor
Tel : (65) 6874 8184
Email : phywangsj@nus.edu.sg or sj-wang@imre.a-star.edu.sg

Current Research

  • Nanoelectronics and nanophotonics

  • Surface and interface physics: high-resolution transmission electron microscopy, in-situ x-ray photoemission spectroscopy and first-principles calculations.

  • Functional oxide growth: Pulsed laser deposition and ultra-high vacuum sputtering.

Selected Publications

  1. Yang, M; Peng, GW; Wu, RQ; Deng, WS; Shen, L; Chen, Q; Feng, YP; Chai, JW; Pan, JS; Wang, SJ: Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study: Appl. Phys. Lett. 93, 222907 (2008).

  2. Dong, YF; Wang, SJ; Feng, YP; Huan, ACH: Chemical tuning of band alignments for metal gate/high-kappa oxide interfaces: Phys. Rev. B 73, 045302 (2006).

  3. Wang, SJ; Chai, JW; Dong, YF; Feng, YP; Sutanto, N; Pan, JS; Huan, ACH: Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric: Appl. Phys. Lett. 88, 192103 (2006).

  4. Dong, YF; Feng, YP; Wang, SJ; Huan, ACH: First-principles study of ZrO2/Si interfaces: Energetics and band offsets: Phys. Rev. B 72, 045327 (2005).

  5. Wang, SJ; Huan, ACH; Foo, YL; Chai, JW; Pan, JS; Li, Q; Dong, YF; Feng, YP; Ong, CK: Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces: Appl. Phys. Lett. 85, 4418 (2004).

  6. Wang, SJ; Ong, CK: Epitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure: Appl. Phys. Lett. 80, 2541 (2002).

Affiliations & Links

  • Institute of Materials Research & Engineering (IMRE)