TOK Eng SoonPhD, Imperial College London, UK (1998)
Office : S13-03-06 | Tel : (65) 6516 1192
Email : email@example.com
Electronic Materials Growth and Interface Characterisation (EMaGIC)
We aim to understand the fundamental relationship between surface science and material properties of low dimensional structures at the atomic scale. Research emphasis is placed on elucidating growth kinetics, dynamics and energetics that controls scaling phenomena and growth processes (adsorption, desorption, nucleation and self-assembly) occurring during thin film formation on semiconducting surfaces and interfaces.
a. Gp-IV-related Epitaxial Film and Low Dimensional Structures.
b. Metal Silicides and Germanides
c. Metal-oxide-based nanostructures.
Research Projects with Industry:
a. Interconnect Materials for Microelectronic Packaging.
b. Photo-responsive SiC-related Materials.
a. Molecular Beam Epitaxy (MBE) and Physical/Chemical Vapor Deposition.
b. Photoelectron Spectroscopy (XPS and UPS).
c. Scanning Probe Microscopy (AFM and STM).
d. Transmission Electron Microscopy (TEM).
e. Mass Spectrometry (TPD and SIMS).
f. Thermal Analysis (DSC and TGA).
Endotaxial growth of CoSi2 nanowires on Si(001) surface: The influence of surface reconstruction, B. L. Ong, S. W. Ong, and E. S. Tok, Surface Science 647, (2016) 84.
Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials, H. Johll, M. Samuel, R. Y. Koo, H. C. Kang, Y. C. Yeo, and E. S. Tok, Journal of Applied Physics 117, (2015) 6.
X-ray-induced Cu deposition and patterning on insulators at room temperature, P.C. Hsu, Y. S. Chen, Y. K. Hwu, J. H. Je, G. Margaritondo, and E. S. Tok, Journal of Synchrotron Radiation 22, (2015) 1524.
Influence of Interconfigurational Electronic States on Fe, Co, Ni-Silicene Materials Selection for Spintronics, H. Johll, M. D. K. Lee, S. P. N. Ng, H. C. Kang, and E. S. Tok, Scientific Reports 4, (2014) 7.
Desorption of Ambient Gas Molecules and Phase Transformation of alpha-Fe2O3 Nanostructures during Ultrahigh Vacuum Annealing, Z. Zhang, J. P. Lu, T. Yun, M. R. Zheng, J. S. Pan, C. H. Sow, and E. S. Tok, Journal of Physical Chemistry C 117, (2013) 1509.
Anomalous scaling behaviour of cobalt cluster size distributions on graphite, epitaxial graphene and carbon-rich (6 root 3 x 6 root 3)R30 degrees, S. W. Poon, A. T. S. Wee, and E. S. Tok, Surface Science 606, (2012) 1586.