TOK Eng SoonPhD, Imperial College London, UK (1998)
BSc (Hons. Physics and Chemistry), NUS, SG (1993)
Office : S13-03-06 | Tel : (65) 6516 1192
Email : firstname.lastname@example.org
Electronic Materials Growth and Interface Characterisation (eMaGIC)
Fundamental surface science and material properties of low dimensional structures at the atomic scale. Research emphasis is placed on elucidating growth kinetics, dynamics and energetics that controls scaling phenomena and growth processes (adsorption, desorption, nucleation and self-assembly) occurring during thin film formation on semiconducting surfaces and interfaces.
Materials Analysis and Reliability Science (MARS)
Applied surface science, interface analysis and elucidation of chemical, physical and structural properties of materials from nano- to macro-scale. Research emphasis is placed on applying non-destructive methods and methodologies in detection and analysis of consumer based products to ensure quality control and reliability.
Research Projects with Materials Growth and Interface Focus
a. Gp-IV-related Epitaxial Film and Low Dimensional Hetero-structures.
b. Metal Silicides and Germanides.
c. Metal-oxide-based nanostructures.
Research Projects with Industry Focus
a. Interconnect Materials for Microelectronic Packaging.
b. Photo-responsive SiC-related Materials.
c. Materials Authentication, Detection, Analysis and Characterisation
a. Molecular Beam Epitaxy (MBE) and Physical/Chemical Vapor Deposition.
b. Photoelectron Spectroscopy (XPS and UPS).
c. Optical Techniques; ATR-FTIR, UV-VIS-NIR and u-Raman.
d. X-Ray; thin film and powder diffraction (XRD).
e. Scanning Probe Microscopy (AFM and STM).
f. Secondary Electron Microscopy (SEM-EDX).
g. Transmission Electron Microscopy (TEM).
h. Mass Spectrometry (TPD and SIMS).
i. Thermal Analysis (DSC and TGA).
Electroless Deposition: Metal on Graphenated Metal for VLSI Interconnects, U. Narula, C. M. Tan and E. S. Tok, Advanced Materials Interfaces 5, (2018) 1800270.
Endotaxial growth of CoSi2 nanowires on Si(001) surface: The influence of surface reconstruction, B. L. Ong, S. W. Ong, and E. S. Tok, Surface Science 647, (2016) 84.
Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials, H. Johll, M. Samuel, R. Y. Koo, H. C. Kang, Y. C. Yeo, and E. S. Tok, Journal of Applied Physics 117, (2015) 6.
X-ray-induced Cu deposition and patterning on insulators at room temperature, P.C. Hsu, Y. S. Chen, Y. K. Hwu, J. H. Je, G. Margaritondo, and E. S. Tok, Journal of Synchrotron Radiation 22, (2015) 1524.
Influence of Interconfigurational Electronic States on Fe, Co, Ni-Silicene Materials Selection for Spintronics, H. Johll, M. D. K. Lee, S. P. N. Ng, H. C. Kang, and E. S. Tok, Scientific Reports 4, (2014) 7.