Goh Kuan Eng, Johnson

PhD, University of New South Wales, Sydney, Australia (2007)

Adjunct Associate Professor
Tel : (65) 6874 7093
Email : gohj@imre.a-star.edu.sg or phygkej@nus.edu.sg

Current Research

  • Additive Manufacturing

  • Atomic Precision Manufacturing

  • Nanofabrication by scanning probe microscopy and molecular beam epitaxy

  • Quantum effects in low-dimensional systems

  • High-K dielectrics

  • Quantum computing

Selected Publications

  1. R. Thamankar, T. L. Yap, K. E. J. Goh, C. Troadec, and C. Joachim, “Low temperature nanoscale electronic transport on the MoS2 surface.”, Appl. Phys. Lett. 103, 083106 (2013).

  2. Y. N. Chen, Kuan Eng Johnson Goh , Xing Wu , Zin Zar Lwin , Pawan K Singh , Souvik Mahapatra , Kin Leong Pey, “Temperature-dependent Relaxation Current on Single and Dual layer Pt Metal Nanocrystal-based Al2O3/SiO2 Gate Stack”, J. Appl. Phys. 112, 094511 (2012).

  3. S. Chen, H. Xu, K. E. J. Goh, Lerwen Liu, and J. N. Randall, “Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature”, Nanotechnology 23, 275301 (2012).

  4. H. Qin, K. E. J. Goh, M. Bosman, K. L. Pey, and C. Troadec, “Effect of surface contamination on electron tunneling in the high bias range”, J. Vac. Sci. Technol. A 30, 041402 (2012).

  5. H. L. Qin, K. E. J. Goh, C. Troadec, M. Bosman, and K. L. Pey, “The electronic barrier height of silicon native oxides at different oxidation stages”, J. Appl. Phys. 111, 054111 (2012).

  6. H. L. Qin, K. E. J. Goh, M. Bosman, K. L. Pey, and C. Troadec, “Subthreshold characteristics of ballistic electron emission spectra”, J. Appl. Phys. 111, 013701 (2012).

  7. H. Qin, Z. Liu, C. Troadec, K. E. J. Goh, M. Bosman, B. S. Ong, S. Y. Chiam, and K. L. Pey, “Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy”, J. Vac. Sci. Technol. B 30, 011805 (2012).

  8. H. L. Qin, C. Troadec, K. E. J. Goh, K. Kakushima, H. Iwai, M. Bosman, and K. L. Pey, “Electronic properties of ultrathin high-k dielectrics studied by ballistic electron emission microscopy”, J. Vac. Sci. Technol. B 29, 052201 (2011).

  9. K. E. J. Goh, J. Ballard, J. N. Randall, and J. R. Von Ehr, “Using patterned H-resist for controlled three-dimensional growth of nanostructures”, Appl. Phys. Lett. 98, 163102 (2011). Also appeared in the Virtual Journal of Nanoscale Science & Technology 23, 1 (2011).

  10. Y. N. Chen, K. L. Pey, K. E. J. Goh, Z. Z. Lwin, P. K. Singh and S. Mahapatra, “Study of automatic recovery on the metal nanocrystal-based Al2O3 /SiO2 gate stack”, Appl. Phys. Lett. 98, 083504 (2011).

Affiliations & Links

  • Institute of Materials Research & Engineering (IMRE)