CHAN Taw Kuei

PhD, National University of Singapore (2009)

Senior Lecturer
Office : S12-03-16  |  Tel : (65) 6516 4149
Email : phyctk@nus.edu.sg

Current Research

  • High-resolution depth profiling of elements in advanced materials using methods of Ion Beams Analysis (IBA).

  • Ion beam modifications of advanced materials in novel device and technology research.

Selected Publications

  1. N. Manikanthababu, T. K. Chan, S. Vajandar, V. Saikiran, A.P. Pathak, T. Osipowicz, S.V.S. Nageswara Rao, “Ion induced intermixing and consequent effects on the leakage currents in HfO2/SiO2/Si systems”, Appl. Phys. A 123, 303 (2017)

  2. T.K. Chan, S.Y. Koh, V. Fang, A. Markwitz, and T. Osipowicz, “Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: the complete picture”, Appl. Surf. Sci. 314, 322 (2014).

  3. S. Mathew, A. Annadi, T.K. Chan, T.C. Asmara, D. Zhan, X.R. Wang, S. Azimi, Z. Shen, A. Rusydi, M.B.H. Breese, and T. Venkatesan, “Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning”, ACS Nano 7, 10572 (2013).

  4. T.K. Chan, F. Fang, A. Markwitz, and T. Osipowicz, “Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry”, Appl. Phys. Lett. 101, 081602 (2012).

  5. S. Mathew, K. Gopinadhan, T.K. Chan, X.J. Yu, D. Zhan, L. Cao, A. Rusydi, M.B.H. Breese, S. Dhar, Z.X. Shen, T. Venkatesan, and J.T.L. Thong, “Magnetism in MoS2 induced by proton irradiation”, Appl. Phys. Lett. 101, 102103 (2012).

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