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Abbreviated Terms |
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A AES Auger Electron Spectroscopy AF Anti-ferromagnetic AFM Atomic Force Microscopy ASIC Application-specific Integrated Circuit B BICMOS Bipolar CMOS BJT Bipolar Junction Transistor C CD Critical dimension CMOS Complementary metal-oxide-semiconductor CMP Chemical-mechanical Polishing CMR Colossal magnetoresistance CNT Carbon nanotube CVD Chemical vapor deposition D DH Double heterojunction DOF Depth of focus DOS Density of states DRAM Dynamic Random Access Memory E ECR Electron Cyclotron Resonance ECS Equilibrium crystal shape EFM Electrostatic Force Microscopy ELO Epitaxial Lateral Overgrowth ESCA Electron Spectroscopy for Chemical Analysis F FET Field-effect Transistor FPD Flat-panel display FWHM Full-width at half maximum G GMR Giant magnetoresistance GSMBE Gas source molecular beam epitaxy H HBT Heterojunction bipolar transistor HEMT High-electron-mobility transistor HOMO Highest occupied molecular orbital HREELS High-resolution electron energy loss spectroscopy IC Integrated circuit IGFET Insulated-gate field effect transistor J JFET Junction field effect transistor L LED Light-emitting diode LEED Low-energy electron diffraction LPCVD Low-pressure chemical vapor deposition LPE Liquid phase epitaxy LSI Large-scale integrated circuit LUMO Lowest unoccupied molecular orbital M MBE Molecular beam epitaxy MEMS Micro-electromechanical system MESFET Metal-semiconductor field effect transistor MFM Magnetic force microscopy MISFET Metal-insulator-semiconductor (or silicon) field effect transistor MOCVD Metal-organic chemical vapor deposition MODFET Modulation-doped field effect transistor MOMBE Metal-organic MBE MOS Metal-oxide-semiconductor (or silicon) MOSFET Metal-oxide-silicon (or semiconductor) field effect transistor MOVPE Metal-organic vapor phase epitaxy MQW Multi-quantum well MR Magnetoresistance MTJ Magnetic tunneling junction MTT Magnetic tunneling transistor MWNT Multi-wall (carbon) nanotube |
N NDR Negative differential resistance NEMS Nano-electromechanical system NIL Nano-imprint lithography NM Non-magnetic or Normal metal NMOS N-channel metal-oxide-silicon NSOM Near-field optical microscopy O OMCVD Organometallic Chemical Vapor Deposition OMVPE Organometallic Vapor Phase Epitaxy P PECVD Plasma-enhanced Chemical Vapor Deposition PL Photoluminecence PMMA Polymethylmethacrylate PMOS P-channel Metal-oxide-silicon PVD Physical Vapor Deposition Q QD Quantum Dots QHE Quantum Hall Effect QW Quantum Well R RAM Random Access Memory RBS Rutherford Backscattering Spectroscopy RF Radio Frequency RHEED Reflection High-energy Electron Diffraction RIE Reactive Ion Etching ROM Read-only Memory RTA Rapid Thermal Annealing RTO Rapid Thermal Oxidation RTP Rapid Thermal Processing S SAM Scanning auger microscopy SEG Selective epitaxial growth SEM Scanning electron microscopy SET Single-electron tunneling SFM Scanning force microscopy SI Semi-insulating SIS Semiconductor-insulator-semiconductor (or) Silicon-insulator-silicon SIMS Secondary-ion mass spectroscopy S-K Stranski-Krastanov (growth mode) SNOM Scanning near-field optical microscopy SOI Silicon on insulator SOS Silicon-on-sapphire SP Spin polarization SPE Solid phase epitaxy SPM Scanning probe microscopy SRAM Static random access memory STM Scanning tunneling microscopy STS Scanning tunneling spectroscopy SWNT Single-wall (carbon) nanotube T 2DEG Two-dimensional electron gas TEC Thermal expansion coefficient TEG or TEGa Triethylgallium [(C2H5)3Ga] TEM Transmission electron microscopy TMG or TMGa Trimethylgallium [(CH3)3Ga] TMR Tunneling magnetoresistance TSP Tunneling spin polarization U UHV Ultra-high vacuum ULSI Ultra-large scale integrated circuit UPS Ultra-violet photoelectron spectroscopy UV Ultra-violet UVOC Ultra-violet ozone cleaning V VPE Vapor phase epitaxy VLSI Very-large scale integrated circuit X XPS X-ray photoelectron spectroscopy XRD X-ray diffraction |