Publication List of Xue-sen Wang

1. "Comparison of LEED and STM measurements of vicinal Si(111)", X.-S. Wang, R.J. Phaneuf, and E.D.  Williams, J. Microscopy 152, 473-480 (1988).

2. "Terrace-Width Distributions on Vicinal Si(111)", X.-S. Wang, J.L. Goldberg, N.C. Bartelt, T.L. Einstein, and E.D. Williams, Phys. Rev. Lett. 65, 2430-2433 (1990).

3. "Quantization of Terrace Widths on Vicinal Si(111)", J.L. Goldberg, X.-S. Wang, J. Wei, N.C. Bartelt, and E.D. Williams, J. Vac. Sci. Technol. A 9, 1868-1873 (1991).

4. "The Precipitation of Kinks on Steped Si(111) Surfaces", J. Wei, X.-S. Wang, N.C. Bartelt, E.D. Williams, and R.T. Tung, J. Chem. Phys. 94, 8384-8389 (1991).

5. "Surface Height Correlation Functions of Vicinal Si(111) Surfaces Using Scanning Tunneling Microscopy", J.L. Goldberg, X.-S. Wang, N.C. Bartelt, and E.D. Williams, Surf. Sci. Lett. 249, L285-L292 (1991).

6. "Simulation and STM Studies of Equilibrium Properties of Vicinal Surfaces", T.L. Einstein, N.C. Bartelt, J.L. Goldberg, X.-S. Wang, E.D. Williams, and B. Joos, in The Structure of Surfaces III, edited by S.Y. Tung, M.A. Van Hove, K. Takayanagi, X.D. Xie (Springer, Berlin, 1991).

7. "Step-Height Mixtures on Vicinal Si(111) Surfaces", J. Wei, X.-S. Wang, J.L. Goldberg, N.C. Bartelt, and E.D. Williams, Phys. Rev. Lett. 68, 3885-3888 (1992).

8. "Scanning Tunneling Microscopy of Filled and Empty Arsenic States on the GaAs(001)-(2x4) Surface", M. Wassermeier, V. Bressler-Hill, R. Maboudian, K. Pond, X.-S. Wang, W.H. Weinberg, and P.M. Petroff, Surf. Sci. 278, L147-L151 (1992).

9. "Analysis of GaAs(100) Surfaces Prepared with Various Wet and In Situ Sample Treatments", X.-S. Wang, K. Self, R. Maboudian, C. Huang, and W.H. Weinberg, J. Vac. Sci. Technol. A 11, 1089-1093 (1993).

10. "Adsorption of Acetylene on the Si(100)-(2x1) Surface", C. Huang, W. Widdra, X.-S. Wang, and W.H. Weinberg, J. Vac. Sci. Technol. A 11, 2250-2254 (1993).

11. "Scanning tunneling microscopy studies of Ge/GaAs(100) interface formation", X.-S. Wang, K. Self, D. Leonard, V. Bressler-Hill, R. Maboudian, P.M. Petroff, and W.H. Weinberg, J. Vac. Sci. Technol. B 11, 1477-1480 (1993).

12. "Performance of an Ultrahigh-Vacuum Sample Transfer System for Investigation of Molecular-Beam Epitaxy Grown Semiconductor Surfaces", X.-S. Wang, C. Huang, V. Bressler-Hill, R. Maboudian, and W.H. Weinberg, J. Vac. Sci. Technol. A 11, 2860-2862 (1993).

13. "Surface Morphology of MBE-grown GaAs(001)-(2x4) and GaAs(001)-faceted Surfaces Investegated by Scanning Tunneling Microscopy", V. Bressler-Hill, R. Maboudian, X.-S. Wang, K. Pond, P.M. Petroff, and W.H. Weinberg, Surf. Sci. 287, 514 (1993).

14. "Surface Structure of Si(112)", X.-S. Wang and W.H. Weinberg, Surf. Sci. 314, 71-78 (1994).

15. "Initial Stages of Ge/GaAs(100) Interface Formation", X.-S. Wang, K. Self, V. Bressler-Hill, R. Maboudian, and W.H. Weinberg, Phys. Rev. B 49, 4775-4779 (1994).

16. "Structural Model of Sulfur on GaAs(100)", X.-S. Wang and W.H. Weinberg, J. Appl. Phys. 75, 2715-2717 (1994).

17. "Growth Mode of Ge on GaAs(100)", X.-S. Wang, K. Self, and W.H. Weinberg, J. Vac. Sci. Technol. A 12, 1920-1923 (1994).

18. “Effect of growth rate on the surface morphology of MBE-grown GaAs(001)-(2×4)”, R. Maboudian, V. Bressler-Hill, K. Pond, X.-S. Wang, P.M. Petroff, and W.H. Weinberg, Surf. Sci. 302, L269-L274 (1994).

19. "Step-edge energetics of the Ge/GaAs(001)-(1´ 2) superstructure", K.W. Self, X.-S. Wang, K. Pond, V. Bressler-Hill, and W.H. Weinberg, Surf. Sci. 398, 1-10 (1998).

20. "Interactions of 300-5000 eV ions with the GaAs(110) surfaces", X.-S. Wang, R.J. Pechman, and J.H. Weaver, Appl. Phys. Lett. 65, 2818-2820 (1994).

21. "Vacancy kinetics and sputtering of GaAs(110)", R.J. Pechman, X.-S. Wang, and J.H. Weaver, Phys. Rev. B 51, 10929-10936 (1995).

22. "Ion sputtering of GaAs(110): From individual bombardment events to multilayer removal", X.-S. Wang, R.J. Pechman, and J. H. Weaver, J. Vac. Sci. Technol. B 13, 2031-2040 (1995).

23. "Interactions of Br with Si(111)-7´ 7: Chemisorption, step retreat, and terrace etching", R.J. Pechman, X.-S. Wang, and J.H. Weaver, Phys. Rev. B 52, 11412-11423 (1995).

24. "Effects of ion-sputtering on Ge epitaxy on GaAs(110)", X.-S. Wang, J. Brake, R.J. Pechman, and J.H. Weaver, Appl. Phys. Lett. 68, 1660-1662 (1996).

25. "Enhanced epitaxial growth on substrates modified by ion sputtering: Ge on GaAs(110)", J. Brake, X.-S. Wang, R.J. Pechman, and J.H. Weaver, Phys. Rev. B 53, 11170-11175 (1996).

26. "Trends in surface roughening: analyses of ion-sputtered GaAs(110)", X.-S. Wang, R.J. Pechman, and J.H. Weaver, Surf. Sci. 364, L511-L518 (1996).

27. "Conformal oxides on Si Surfaces", V. Tsai, X.-S. Wang, E.D. Williams, J. Schneir, and R. Dixson, Appl. Phys. Lett. 71, 1495-1497 (1997).

28. "Step structures on Br-chemisorbed vicinal Si(111)", X.-S. Wang and E.D. Williams, Surf. Sci. 400, 220-231 (1998).

29. "Evolution of surface morphology of Si(111) vicinal surfaces after aluminum deposition", C. Schwennicke, X.-S. Wang, T.L. Einstein, and E.D. Williams, Surf. Sci. 418, 22-31 (1998).

30. "Characterization of structures fabricated by atomic force microscope lithography", E.S. Fu, X.-S. Wang, and E.D. Williams, Surf. Sci. 438, 58-67 (1999).

31. "Crystalline Si3N4 thin films on Si(111) and the 4×4 reconstruction on Si3N4(0001)", X.-S. Wang, G. Zhai, J. Yang, and N. Cue, Phys. Rev. B 60, R2146-R2149 (1999).

32. "Surface structures of silicon nitride thin films on Si(111)", G. Zhai, J. Yang, N. Cue, and X.-S. Wang, Thin Solid Films 366, 121-128 (2000).

33. "An atomic structural model proposed for the (2Ö 3 ´ 2Ö 3)-R30° reconstruction on 3C-SiC(111) of crystallized islands on Si(111) by C60 precursor", J. Yang, X.-S. Wang, G. Zhai, N. Cue, and X. Wang, Surf. Sci. 476, 1-8 (2001).

34. "Characterization of crystalline SiNx thin films on Si(111) and Ge overlayer growth", X.-S. Wang, Z.Q. Li, L. Wang, Y. Hu, G. Zhai, J. Yang, Y. Wang, K.K. Fung, J.C. Tang, X. Wang, and N. Cue, Jpn. J. Appl. Phys. 40, 4292-4298 (2001).

35. "Self-assembled growth of cubic silicon nitride nano-islands on silicon", J. Yang, X.-S. Wang, G. Zhai, N. Cue, and X. Wang, J. Cryst. Growth 224, 83-88 (2001).

36. "Nitridation of Si(111)", X.-S. Wang, G. Zhai,  J. Yang, L. Wang, Y. Hu, Z.Q. Li, J.C. Tang, X. Wang, K.K. Fung, and N. Cue, Surf. Sci. 494, 83-94 (2001).

37. “Scanning tunneling microscopy of endohedral metallofullerene Tb@C82 on C60 film and Si(100) 2x1 surface", B.-R. Shi, X.-S. Wang, H.J. Huang, S.-H. Yang, W. Heiland, and N. Cue, J. Phys. Chem. B 105, 11414-11418 (2001).

38. “Investigation of Si and Ge growth on Si3N4/Si”, L. Wang, X.-S. Wang, J.-C. Tang, and N. Cue, Mater. Characterization 48, 189-194 (2002).

39. “Ge islanding growth on nitridized Si and the effect of Sb surfactant”, Y. Hu, X.-S. Wang, N. Cue, and X. Wang, J. Phys.: Condens. Matter 14, 8939-8946 (2002).

40. “Fabrication and structural analysis of Al, Ga, and In nanocluster crystals”, J.-F. Jia, X. Liu, J.-Z. Wang, J.-L. Li, X.-S. Wang, Q.-K. Xue, Z.-Q. Li, Z. Zhang, and S.B. Zhang, Phys. Rev. B 66, 165412 (2002).

41. “Scanning tunneling microscopy of endohedral metallofullerene Lu-C82 on C60 film”, B.-R. Shi, X.-S. Wang, H. Huang, S.-H. Yang, A. Bachmann, and N. Cue, J. Vac. Sci. Technol. B 20, 2388-2392 (2002).

42. “Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN”, L. Wang, Y. Hu, Z. Li, J.-C. Tang, and X.-S. Wang, Nanotechnology 13, 714-719 (2002).

43. “Spontaneous assembly of perfectly ordered identical-size nanocluster arrays”, J.-F. Jia, J.-Z.Wang, X. Liu, X. S. Wang, Q.-K. Xue, Z.-Q. Li, S.B. Zhang, Nanotechnology 13, 736-740 (2002).

 

44. “Formation of ordered two-dimensional nanostructures of Cu on the Si(111)-(7 × 7) surface”, Y.P. Zhang, L. Yang, Y.H. Lai, G.Q. Xu, and X.-S. Wang, Surf. Sci. 531, L378-L382 (2003).

45. “Self-assembly of one-dimensional molecular nanostructures on the Ge-covered Si(100) surface”, Y.P. Zhang, L. Yang, Y.H. Lai, G.Q. Xu, and X.-S. Wang, Appl. Phys. Lett. 84, 401-403 (2004).

46. "Formation of ordered molecular nanostructures on Si(111)-(7x7) surface by patterned assembly", Y.P. Zhang,, L. Yang, Y.H. Lai, G.Q. Xu, and X.-S. Wang, Appl. Phys. Lett. 85, 2926-2928 (2004).

47. “Strain-mediated uniform islands in stacked Ge/Si(001) layers”, M. Xu, M. Jeyanthinath, X.-S. Wang, J. Jia, and Q. Xue, Japan. J. Appl. Phys. 43, 7411-7414 (2004).

48. “Evolution and ordering of multilayer Ge quantum dots on Si(001)”, M. Jeyanthinath, M. Xu, and X.-S. Wang, Int. J. Nanoscience 3, 579-587 (2004).

49. “Film growth of germanium on Ru(0001) studies by scanning tunneling microscopy”, H.J. Zhang, B. Lu, X.-S. Wang, F. Hu, H.Y. Li, S.N. Bao, P. He, Phys. Rev. B 70, 235415:1-5 (2004).

50. “Selective attachment of 1,4-benzenedimethanethiol on copper mediated Si(111)-(7´7) surface through C-Cu linkage”, Y.P. Zhang, K.S. Yong, Y.H. Lai, G.Q. Xu, and X.S. Wang, J. Phys. Chem. B 109, 13843-13846 (2005).

51.  “Reactive Co magic cluster formation on Si(111)-7´7”, M. A. K. Zilani, Y. Y. Sun, H. Xu, Lei Liu, Y. P. Feng, X.-S. Wang, and A. T. S. Wee, Phys. Rev. B 72, 193402:1-4 (2005).

52. “Terrace width dependence of cobalt silicide nucleation on Si(111)-7´7”, M. A. K. Zilani, H. Xu, X.-S. Wang, and A. T. S. Wee, Appl. Phys. Lett. 88, 023121:1-3 (2006).

53. “Surface morphology of crystalline antimony islands on graphite at room temperature”, S. S. Kushvaha, Z. Yan, W. Xiao, and X.-S. Wang, J. Phys.: Condens. Matter 18, 3425-3434 (2006).

54. “Formation of copper clusters on a thiophene mediated Si(111)-(7´7) surface via molecular anchors”, Y.P. Zhang, K.S. Yong, H.S.O. Chan, G.Q. Xu, and X.S. Wang, Appl. Phys. Lett. 88, 123106:1-3 (2006).

55. “Electronic structures of Co-induced magic clusters grown on Si(111)-7´7: scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations”, M. A. K. Zilani, H. Xu, T. Liu, Y. Sun, Y. P. Feng, X.-S. Wang, and A. T. S. Wee, Phys. Rev. B 73, 195415 (2006).

56. “Self-assembly of antimony nanowires on graphite”, X.-S. Wang, S. S. Kushvaha, Z. Yan, and W. Xiao, Appl. Phys. Lett. 88, 233105:1-3 (2006).

57. “Different growth behavior of Ge, Al and Sb on graphite”, Wende Xiao, Zhijun Yan, Sunil Singh Kushvaha, Maojie Xu, and Xue-sen Wang, Surf. Rev. Lett. 13, 287-296 (2006).

58.In-situ STM investigations of Ge nanostructures with and without Sb on graphite”, S. S. Kushvaha, Z. Yan, M.-J. Xu, W. Xiao, and X.-S. Wang, Surf. Rev. Lett. 13, 241-250 (2006).

59. “Self-assembled Ge, Sb and Al nanostructures on graphite: Comparative STM studies”, S. S. Kushvaha, Z. Yan, W. Xiao, M.-J. Xu, Q.-K. Xue, and X.-S. Wang, Nanotechnology 18, 145501:1-10 (2007).

60.  "Quantitative analysis of Si mass transport during formation of Cu/Si(111)-(5´5) from scanning tunneling microscopy", Y.P. Zhang, K.S. Yong, H.S.O. Chan, G.Q. Xu, S. Chen, X.S. Wang, and A.T.S. Wee, Phys. Rev. B 75, 073407:1-4 (2007).

61. “Synthesis and magnetic properties of MnSb nanoparticles on Si-based substrates”, H. Zhang, S.S. Kushvaha, S. Chen, X. Gao, D. Qi, A.T.S. Wee, and X.-S. Wang, Appl. Phys. Lett. 90, 202503:1-3 (2007).

62. “Different dimensional structures of antimony formed selectively on graphite”, Z. Yan, S. S. Kushvaha, W. Xiao, and X.-S. Wang, Appl. Phys. A 88, 299-307 (2007).

63. “Morphology, surface structures and magnetic properties of MnSb thin films and nano-crystallites grown on graphite”, Hongliang Zhang, Sunil S. Kushvaha, Andrew T. S. Wee, and Xue-sen Wang, J. Appl. Phys. 102, 023906:1-7 (2007).

 

Book Chapters:

1. X.-S. Wang, “Si and Ge growth on inert substrates: From nanoparticle to thin film”, in: E.V. Dirote (ed.), Nanotechnology Focus (Nova Science, New York, 2005), Chapter 4, pp. 69-90.

2. X.-S. Wang, “Nanoparticles, nanorods and other nanostructures assembled on inert substrates”, in: G.A. Mansoori, T.F. George, L. Assoufid, and G. Zhang (eds.), Molecular Building Blocks for Nanotechnology: From Diamondoids to Nanoscale Materials and Applications (Topics in Applied Physics Series Volume 109), Springer-Verlag, New York, February 2007, pp. 118-153.

3.      X.-S. Wang, W. Xiao, S.S. Kushvaha, Z. Yan and M. Xu, “A comparative study of Al, Ge and Sb self-assembled nanostructures on graphite”, in: E.V. Dirote (ed.), New Development in Nanotechnology Research (Nova Science Publishers, 2006), Chapter 6.