PAN JishengPhD, National University of Singapore (1998)
Photoemission technique development
Surface nanostructure formation, characterization and applications
Growth and characterization of thin films for microelectronic device fabrication
Ion beam pattern of semiconductor surfaces
Industry surface analysis and consulting service
C. Ke, W.G. Zhu, Z. Zhang, E.S. Tok, B. Ling, and J.S. Pan, “Thickness-induced metal-insulator transition in Sb-doped SnO2 ultrathin films: the role of quantum confinement”, Sci. Rep. 5, 17424 (2015).
H. Wang, Y.M. Du, Y.T. Li, B.W. Zhu, W.R. Leow, Y.G. Li, J.S. Pan, T. Wu, and X.D. Chen, “Configurable resistive switching between memory and threshold characteristics for protein-based devices”, Adv. Funct. Mater. 25, 3825 (2015).
J.G. Tao, J.W. Chai, X. Lu, L.M. Wong, T.I. Wong, J.S. Pan, Q.H. Xiong, D.Z. Chi, and S. J. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering” Nanoscale 7, 2497 (2015).
J.G. Tao, J.W. Chai, Z. Zhang, J.S. Pan, and S.J. Wang, “The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces”, Appl. Phys. Lett. 104, 232110 (2014).
T.L. Duan, J.S. Pan, and D.S. Ang, “Interfacial chemistry and band offsets between Al2O3 and GaN studied by X-ray photoelectron spectroscopy”, Appl. Phys. Lett. 102, 201604 (2013).