CHAN Taw KueiPhD, National University of Singapore (2009)
Office : S12-03-16 | Tel : (65) 6516 4149
Email : email@example.com
High-resolution depth profiling of elements in advanced materials using methods of Ion Beams Analysis (IBA).
Ion beam modifications of advanced materials in novel device and technology research.
T.K. Chan, S.Y. Koh, V. Fang, A. Markwitz, and T. Osipowicz, Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: the complete picture, Applied Surface Science 314 322 (2014)
S. Mathew, A. Annadi, T.K. Chan, T.C. Asmara, D. Zhan, X.R. Wang, S. Azimi, Z. Shen, A. Rusydi, M.B.H. Breese, and T. Venkatesan, “Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning”, ACS Nano 7, 10572 (2013).
T.K. Chan, F. Fang, A. Markwitz, and T. Osipowicz, “Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry”, Appl. Phys. Lett. 101, 081602 (2012).
S. Mathew, K. Gopinadhan, T.K. Chan, X.J. Yu, D. Zhan, L. Cao, A. Rusydi, M.B.H. Breese, S. Dhar, Z.X. Shen, T. Venkatesan, and J.T.L. Thong, “Magnetism in MoS2 induced by proton irradiation”, Appl. Phys. Lett. 101, 102103 (2012).
S.K. Karuturi, L. Liu, L.T. Su, A. Chutinan, N.P. Kherani, T.K. Chan, T. Osipowicz, and A.L.Y. Tok, “Gradient inverse opal photonic crystals via spatially controlled template replication of self-assembled opals” Nanoscale 3, 4951 (2011).
S. Mathew, T.K. Chan, D. Zhan, K. Gopinadhan, A.R. Barman, M.B.H. Breese, S. Dhar, Z.X. Shen, T. Venkatesan, and J.T.L. Thong, “The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation”, Carbon 49, 1720 (2011).